| PART |
Description |
Maker |
| 2SC3437 E000848 |
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING/ COMPUTER/ COUNTER APPLICATIONS)
From old datasheet system
ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS
NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| GBAV152 |
The GBAV152 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| KTK5131S |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| HN1D02F07 HN1D02F |
Ultra-High-Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS30107 1SS301 1SS301-07 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS226 |
Ultra High Speed Switching Application
|
Yea Shin Technology Co....
|
| 1SS226T5LFT 1SS226TE85L |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS362FV |
Ultra-High-Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS38707 1SS387 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| L1SS226LT1G L1SS226LT1 |
Ultra High Speed Switching Application
|
LRC[Leshan Radio Company]
|
| 1SS19007 1SS190 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
